Get Tom's Hardware's best news and in-depth reviews, straight to your inbox. You are now subscribed Your newsletter sign-up was successful Researchers at the University of Cambridge published a paper in Science Advances earlier this month describing a new type of hafnium oxide memristor. The highlight of the new technology is that it operates at switching currents roughly a million times lower than conventional oxide-based devices. The team, led by Dr. Babak Bakhit from Cambridge's Department of Materials Science and Metallurgy, engineered a multicomponent thin film that forms an internal p-n junction, enabling the device to switch states smoothly at currents below 10 nanoamps while producing hundreds of distinct conductance levels. Memristors are two-terminal devices that can store and process data in the same physical location, eliminating the energy-intensive data shuttling between separate memory and processing units in conventional computer architectures.…