SK Hynix has reportedly broken ground on a new advanced memory packaging facility in West Lafayette, Indiana, that should boost the supply of US-made high-bandwidth memory (HBM), a key component in high-end AI accelerators from the likes of Nvidia and AMD. Unlike the system memory used in notebooks, smartphones, and general purpose servers, HBM requires specialized packaging and test services to stack multiple layers, often 8-12, of DRAM together to form a single module. Today, most HBM memory is manufactured in Korea by Samsung and SK Hynix, with Micron being the United States' primary source of homegrown memory. That will change slightly when SK Hynix's Indiana plant, expected to cost nearly $4 billion to build, is completed in late 2027. Late last week, South Korean newspaper the Herald Economy reported that SK had notified local officials that construction of the facility's foundation was now underway, with vertical construction slated for later this year.…